DCT

4:22-cv-04769

Realtek Semiconductor Corp v. Advanced Micro Devices Inc

Key Events
Complaint

I. Executive Summary and Procedural Information

  • Parties & Counsel:
  • Case Identification: 5:22-cv-04769, N.D. Cal., 08/19/2022
  • Venue Allegations: Venue is asserted as proper because Defendant AMD maintains its principal place of business in the Northern District of California.
  • Core Dispute: Plaintiff alleges that Defendant’s processor and graphics card products infringe three patents related to semiconductor design, specifically concerning inductor structures, power mesh arrangements, and inductor-capacitor circuits.
  • Technical Context: The patents relate to fundamental circuit layout and power distribution techniques used in complex, high-performance integrated circuits, a domain critical for modern CPUs and GPUs.
  • Key Procedural History: The complaint alleges that Defendant AMD had pre-suit knowledge of U.S. Patent No. 7,936,245 because Xilinx, Inc., which AMD later acquired, cited the patent during the prosecution of its own patent application.

Case Timeline

Date Event
2007-11-15 U.S. Patent No. 8,006,218 Priority Date
2009-05-19 U.S. Patent No. 7,936,245 Priority Date
2011-05-03 U.S. Patent No. 7,936,245 Issued
2011-08-23 U.S. Patent No. 8,006,218 Issued
2014-04-16 U.S. Patent No. 9,590,582 Priority Date
2017-03-07 U.S. Patent No. 9,590,582 Issued
2022-08-19 Complaint Filed

II. Technology and Patent(s)-in-Suit Analysis

U.S. Patent No. 7,936,245 - Stacked Structure of a Spiral Inductor, issued May 3, 2011

The Invention Explained

  • Problem Addressed: In high-frequency integrated circuits, passive components like spiral inductors suffer from "metal loss," where the resistance of the metal windings degrades the inductor's performance (quality factor). Improving the quality factor by simply making the windings wider consumes valuable chip area. (’245 Patent, col. 1:15-30).
  • The Patented Solution: The patent describes a stacked spiral inductor that uses multiple metal layers. Critically, it utilizes the metal layers in the "crossover region"—where one part of the spiral passes over another—as parallel "shunt windings." This configuration lowers the overall series resistance without increasing the inductor's footprint, thereby improving the quality factor. (’245 Patent, Abstract; col. 2:4-8).
  • Technical Importance: This approach provided a method to improve the efficiency of on-chip inductors, which are essential components in radio-frequency (RF) circuits, without consuming more silicon area, a key constraint in semiconductor design. (’245 Patent, col. 1:7-15).

Key Claims at a Glance

  • The complaint asserts claims 1, 2, 8, 9, 10, and 12, of which claims 1 and 10 are independent.
  • Independent Claim 1 recites a structure comprising:
    • A first metal layer with first, second, and third segments.
    • A second metal layer beneath the first, with fourth, fifth, and sixth segments.
    • A first set of vias connecting the first and fourth segments to form a "first shunt winding."
    • A second set of vias connecting the second and fifth segments to form a "second shunt winding."
    • The third and sixth segments together construct a "crossover region."
  • Independent Claim 10 recites a similar structure but more specifically requires the third segment to be positioned between the first and second segments, and the sixth segment to be positioned between the fourth and fifth segments.
  • The complaint reserves the right to assert infringement of dependent claims. (Compl. ¶21).

U.S. Patent No. 8,006,218 - Power Mesh Arrangement Method Utilized in an Integrated Circuit Having Multiple Power Domains, issued August 23, 2011

The Invention Explained

  • Problem Addressed: Designing power delivery networks for complex chips with multiple power domains (e.g., areas of a chip that operate at different voltages or can be powered down independently) is difficult. Standard automatic placement and routing (APR) tools were often limited to handling single power domains, forcing designers into inefficient manual routing. (’218 Patent, col. 1:36-43).
  • The Patented Solution: The invention provides a structured method for creating a power grid for multiple power domains. It involves creating separate "partial local power meshes" for each domain and a "global power mesh" positioned on higher metal layers that supplies power to all the underlying local meshes. This hierarchical approach is designed to be systematically implemented by APR tools, improving design efficiency. (’218 Patent, Abstract; col. 2:51-62).
  • Technical Importance: This method provides a systematic and automatable approach to power grid design, addressing a key challenge in creating power-efficient and complex System-on-Chip (SoC) devices with features like sleep modes and dynamic voltage scaling. (’218 Patent, col. 1:16-25).

Key Claims at a Glance

  • The complaint asserts claims 12 through 18, of which claim 12 is independent.
  • Independent Claim 12 recites a power routing structure comprising:
    • A "first partial local power mesh" for a first power domain.
    • A "second partial local power mesh" for a second power domain, positioned on the same metal layer as the first.
    • A "global power mesh" positioned on different metal layers above the local power meshes, which couples to and provides power to both local meshes separately.
  • The complaint reserves the right to assert infringement of dependent claims. (Compl. ¶31).

U.S. Patent No. 9,590,582 - Semiconductor Device with Inductor-Capacitor Resonant Circuit, issued March 7, 2017

  • Technology Synopsis: The patent addresses the challenge of integrating inductor-capacitor (LC) resonant circuits compactly onto a semiconductor chip while minimizing signal loss. (’582 Patent, col. 1:36-48). The solution is a three-dimensional layout where the inductor component is formed on one surface of an insulation layer and the capacitor component is formed on the opposite surface, "embedded" within a region defined by the inductor's shape to save space. (’582 Patent, Abstract).
  • Asserted Claims: Claims 1 through 4 and 9 are asserted, with claims 1 and 9 being independent. (Compl. ¶40).
  • Accused Features: The complaint alleges that the accused AMD products contain semiconductor devices that embody this specific 3D inductor-capacitor structure. (Compl. ¶¶38-39).

III. The Accused Instrumentality

Product Identification

The accused products include various AMD processors and graphics processing units (GPUs). Specific examples cited are 3rd and 4th Gen Ryzen processors (e.g., Ryzen 5 5600X, Ryzen 7 5800X), 3rd Gen Threadripper processors, 2nd Gen EPYC CPUs, and Radeon 6000 series GPUs (e.g., Radeon 6500 XT, RX 6600XT). (Compl. ¶19, ¶29, ¶38).

Functionality and Market Context

The complaint identifies these products as high-performance semiconductor chips used for computing and data processing. (Compl. ¶4). The complaint includes a screenshot from AMD's online store showing the AMD Ryzen™ 5 5600X Processor offered for sale, highlighting its specifications such as core count and clock speed. (Compl. p. 6). The allegations suggest these products are commercially significant and incorporate the fundamental circuit structures claimed in the patents-in-suit to achieve their performance and power efficiency. (Compl. ¶¶23, 33, 42).

IV. Analysis of Infringement Allegations

The complaint references claim chart exhibits for each patent (Exhibits D, E, F), but these exhibits were not filed with the public complaint. The infringement analysis is therefore based on the narrative allegations.

'245 Patent Infringement Allegations

The complaint alleges that the '245 Accused Products, including Ryzen processors and Radeon GPUs, contain the patented "Stacked Structure of a Spiral Inductor." (Compl. ¶¶ 19-20). The infringement theory posits that to achieve the required performance in a compact form factor, AMD's chips must use on-chip inductors with structures that improve quality factor without increasing area. The complaint alleges these structures meet the limitations of the '245 Patent's claims, including the use of stacked metal layers and vias to create "shunt windings" in a "crossover region." (Compl. ¶21). A screenshot from an AMD webpage advertises a Radeon RX 6500 XT graphics card, which the complaint alleges incorporates the infringing technology. (Compl. p. 8).

'218 Patent Infringement Allegations

The complaint alleges that the '218 Accused Products, which are complex SoCs with multiple power domains, necessarily implement a power delivery architecture that infringes the '218 Patent. (Compl. ¶¶ 29-30). The infringement theory is that these chips utilize a hierarchical power grid consistent with the claimed structure of distinct "partial local power meshes" for different functional blocks, which are in turn supplied by an overlying "global power mesh." (Compl. ¶31). This structure is alleged to be necessary for managing the complex power requirements of modern processors and GPUs.

V. Key Claim Terms for Construction

For the ’245 Patent

  • The Terms: "shunt winding" and "crossover region"
  • Context and Importance: These terms are at the heart of the invention's purported novelty. The definition of what constitutes a "shunt winding" (formed by connecting segments on different metal layers with vias) and a "crossover region" will be critical to determining if the physical layouts in AMD's complex chips fall within the claim scope.
  • Intrinsic Evidence for Interpretation:
    • Evidence for a Broader Interpretation: The patent describes the invention's objective as improving quality factor by using metal layers of a crossover region as shunt windings. (´245 Patent, col. 2:4-8). A party might argue any structure that achieves this function using a similar layered approach meets the definition.
    • Evidence for a Narrower Interpretation: The patent provides specific illustrated embodiments (e.g., FIG. 1, FIG. 3) showing particular geometric arrangements of segments, vias, and layers. (´245 Patent, col. 4:26-40). A party could argue the terms should be limited to these or structurally similar configurations.

For the ’218 Patent

  • The Terms: "partial local power mesh" and "global power mesh"
  • Context and Importance: The infringement case hinges on whether AMD's power delivery network maps onto this claimed two-level hierarchy. Practitioners may focus on these terms because modern CPU/GPU power grids can be extraordinarily complex, with many more than two hierarchical levels, raising the question of whether AMD's architecture fits the specific model claimed.
  • Intrinsic Evidence for Interpretation:
    • Evidence for a Broader Interpretation: The patent defines the terms functionally: local meshes supply power to specific domains, while the global mesh supplies power to the local meshes. (´218 Patent, col. 2:54-62). An argument could be made that any two-tiered subset of a more complex grid meets this functional definition.
    • Evidence for a Narrower Interpretation: The claims and figures describe a distinct structure where the global mesh is "positioned above" the local meshes on different metal layers and is "distributed evenly." (´218 Patent, Claim 11; col. 3:23-25). A party might argue that only architectures that strictly adhere to this spatial and structural arrangement infringe.

VI. Other Allegations

Indirect Infringement

For all three patents, the complaint alleges induced infringement. The allegations are based on AMD providing the accused products to third parties (customers, distributors, etc.) and encouraging their use through advertising, user manuals, and sales activities, knowing these actions would cause infringement. (Compl. ¶23, ¶33, ¶42).

Willful Infringement

  • For the '245 Patent, willfulness is alleged based on pre-suit knowledge stemming from AMD's acquisition of Xilinx, which had previously cited the '245 Patent during its own patent prosecution. (Compl. ¶25).
  • For all three patents, willfulness is also alleged based on knowledge of the patents since at least the filing of the complaint, coupled with continued alleged infringement. (Compl. ¶25, ¶34, ¶43).

VII. Analyst’s Conclusion: Key Questions for the Case

  • A central issue will be one of claim construction and structural mapping: Do the physical layouts of inductors and power grids within AMD's highly complex, modern processors and GPUs, which are designed using proprietary and advanced techniques, meet the specific structural and functional definitions of terms like "shunt winding," "partial local power mesh," and "global power mesh" as described and claimed in patents from over a decade ago?
  • A key evidentiary question will be what proof Plaintiff can obtain through discovery to demonstrate that the internal, non-public micro-architectures of the accused products actually practice the elements of the asserted claims. The complaint currently relies on "information and belief" and high-level product marketing, which will need to be substantiated with technical evidence of the chips' internal construction.
  • For the '245 Patent, a significant question regarding willfulness will be whether Xilinx's pre-acquisition knowledge of the patent, through a citation in a patent application, can be imputed to AMD to establish pre-suit knowledge and deliberate disregard of Realtek's patent rights.