DCT

4:23-cv-00978

Bell Semiconductor LLC v. Fortinet Inc

Key Events
Complaint
complaint

I. Executive Summary and Procedural Information

  • Parties & Counsel:
  • Case Identification: 4:23-cv-00978, E.D. Tex., 10/31/2023
  • Venue Allegations: Plaintiff alleges venue is proper because Defendant maintains a "regular and established place of business" in the district, employs personnel there, and has committed acts of infringement within the district.
  • Core Dispute: Plaintiff alleges that Defendant’s semiconductor chips, including the FortiSOC3 and FortiASIC-CP9, infringe three patents related to semiconductor package design for improving thermal reliability and reducing electrical interference.
  • Technical Context: The patents address physical design challenges in high-density, multi-layer semiconductor packages, specifically mitigating mechanical stress from thermal cycling and signal degradation from parasitic capacitance.
  • Key Procedural History: The complaint alleges Plaintiff provided Defendant with actual notice of the asserted patents and its infringement contentions on June 30, 2023. Subsequent to the filing of the complaint, the assignee filed a disclaimer on February 18, 2024, disclaiming all claims of U.S. Patent No. 7,345,245 except for claims 1-6 and 8, which includes the disclaimer of independent claim 7.

Case Timeline

Date Event
2003-10-08 U.S. Patent No. 7,345,245 Priority Date
2006-03-22 U.S. Patent No. 8,049,340 Priority Date
2006-03-22 U.S. Patent No. 8,288,269 Priority Date
2008-03-18 U.S. Patent No. 7,345,245 Issued
2011-10-04 U.S. Patent No. 8,288,269 Application Filed
2011-11-01 U.S. Patent No. 8,049,340 Issued
2012-10-16 U.S. Patent No. 8,288,269 Issued
2023-06-30 Plaintiff allegedly provided actual notice to Defendant
2023-10-31 Complaint Filed
2024-02-18 Disclaimer filed for claims of U.S. Patent No. 7,345,245

II. Technology and Patent(s)-in-Suit Analysis

U.S. Patent No. 7,345,245 - "Robust High Density Substrate Design for Thermal Cycling Reliability," issued March 18, 2008

The Invention Explained

  • Problem Addressed: The patent describes how high-density semiconductor packages are susceptible to mechanical stress during thermal cycling (heating and cooling). This stress is concentrated under the corners of the semiconductor die and can cause cracks to initiate at the edges of the solder ball pads, which can then propagate into and sever the delicate signal traces routed in the layer above, causing device failure (Compl. ¶15; ’245 Patent, col. 1:19-22, col. 2:1-4).
  • The Patented Solution: The invention proposes a design rule for routing signal traces to improve reliability. It defines a "high stress area" under the die corner and mandates that within this zone, signal traces on a routing layer must not be placed directly over the ball pads on the layer below it (’245 Patent, Abstract). By creating this "keep-out" zone, the design ensures that even if cracks form at the ball pads, they will not damage the critical signal traces, thereby improving the package's structural integrity (’245 Patent, col. 4:56-59).
  • Technical Importance: This approach provided a method to increase the thermal cycling reliability of a package without resorting to solutions that could reduce signal routing density, a critical consideration for advanced electronics (Compl. ¶18).

Key Claims at a Glance

  • The complaint asserts independent claim 1 (Compl. ¶17).
  • Essential elements of independent claim 1:
    • A semiconductor package comprising a top layer with a die mounted on it, the die having a corner.
    • A plurality of layers beneath the top layer, which include a "bottom routing layer" with signal traces and a "ball pad layer" underneath that.
    • A specific layout constraint: "none of the signal traces of the bottom routing layer are located over ball pads of the ball pad layer which are disposed in an area within two ball pad pitches of the corner of the die."
  • The complaint asserts "one or more claims" of the patent (Compl. ¶37).

U.S. Patent No. 8,049,340 - "Device for Avoiding Parasitic Capacitance in an Integrated Circuit Package," issued November 1, 2011

The Invention Explained

  • Problem Addressed: In high-frequency integrated circuits, the close proximity of different conductive metal layers creates unintended electrical coupling, or "parasitic capacitance." This effect can distort high-speed signals, corrupt data, and limit the maximum operating frequency of the device, a particular problem for serializing/deserializing (SERDES) components (Compl. ¶21; ’340 Patent, col. 2:52-60).
  • The Patented Solution: The patent teaches creating voids, or "cutouts," in a conductive layer (e.g., a ground or power plane) in the areas directly above the signal-carrying contact pads on a lower layer (’340 Patent, col. 4:4-9). As described in the detailed description, these cutouts ensure there is no metal-to-metal overlap between the layers at that point, which significantly reduces parasitic capacitance and preserves signal integrity at high frequencies (’340 Patent, col. 4:50-65).
  • Technical Importance: By mitigating parasitic capacitance, this design enables integrated circuits to operate reliably at higher data transfer rates, a key requirement for modern high-speed communication systems (Compl. ¶27).

Key Claims at a Glance

  • The complaint asserts independent claim 1 (Compl. ¶25).
  • Essential elements of independent claim 1:
    • An integrated circuit package substrate with a first and a second electrically conductive layer, separated by an insulating layer with no intermediate conductive layer.
    • The first layer includes a plurality of rows of "contact pads" for connection to a printed circuit board.
    • The second layer includes a "plurality of cutouts" designed to reduce parasitic capacitance.
    • A positional requirement: each cutout encloses an insulating area that "completely overlaps" a corresponding contact pad below it, resulting in "substantially no overlap" between the contact pads and the metal in the second layer.
  • The complaint also quotes dependent claim 2 and reserves the right to assert "one or more claims" (Compl. ¶¶ 26, 47).

U.S. Patent No. 8,288,269 - "Methods for Avoiding Parasitic Capacitance in an Integrated Circuit Package," issued October 16, 2012

Technology Synopsis

This patent is a divisional of the application that led to the ’340 patent and shares an identical specification (Compl. ¶30). It addresses the same technical problem of parasitic capacitance. However, rather than claiming the physical package apparatus, the ’269 patent claims the method of manufacturing such a package, including the steps of forming the conductive and insulating layers and creating the specified cutouts to eliminate metal overlap over the contact pads (Compl. ¶31).

Asserted Claims

The complaint quotes independent claim 1 and dependent claim 2 (Compl. ¶¶ 31-32).

Accused Features

Plaintiff alleges that Defendant infringes under 35 U.S.C. § 271(g) by importing, selling, or using semiconductor devices, such as the FortiSOC3, that have been manufactured using the patented method (Compl. ¶57).

III. The Accused Instrumentality

Product Identification

The accused instrumentalities are Fortinet's semiconductor chips and packages, "including but not limited to the FortiSOC3 and the FortiASIC-CP9" (Compl. ¶1). The FortiASIC-CP9 is specifically accused of infringing the ’245 patent, while the FortiSOC3 is accused in relation to the ’340 and ’269 patents (Compl. ¶¶ 37, 47, 57).

Functionality and Market Context

The complaint describes the accused products as semiconductor chips and packages (Compl. ¶1). It does not provide specific details on the technical operation or function of these chips. The complaint alleges that the performance characteristics of the accused products are "essential" and "non-trivial" components that "enable the high performance of the downstream products that drives market demand" (Compl. ¶60).

IV. Analysis of Infringement Allegations

The complaint references but does not include claim chart exhibits (Exhibits D, E, F) that detail its infringement theories (Compl. ¶¶ 38, 48, 61). No probative visual evidence provided in complaint. The narrative infringement allegations are summarized below.

’245 Patent Infringement Allegations

The complaint alleges that the FortiASIC-CP9 is a semiconductor package that practices the claimed invention (Compl. ¶37). The theory is that the accused package is constructed with multiple layers where, in the high-stress region near the die corner, its signal traces are deliberately routed to avoid passing over the underlying ball pads, mirroring the structure required by claim 1 (Compl. ¶¶ 16-17).

’340 Patent Infringement Allegations

The complaint alleges that the FortiSOC3 product is an integrated circuit package substrate that embodies the structure of the ’340 patent’s claims (Compl. ¶47). The infringement theory is that the FortiSOC3 contains conductive layers with cutouts that are positioned to "completely overlap" the contact pads on an adjacent layer, thereby achieving "substantially no overlap" and reducing parasitic capacitance as claimed (Compl. ¶¶ 24-25).

Identified Points of Contention

  • Scope & Factual Questions (’245 Patent): The dispute may center on the definition of "an area within two ball pad pitches of the corner of the die." The court may need to determine the precise geometric boundaries of this "keep-out" zone. A key factual question will be whether the FortiASIC-CP9's physical layout, once examined, actually adheres to this claimed routing restriction.
  • Technical & Definitional Questions (’340 Patent): A central dispute will likely involve the term "substantially no overlap." The analysis will question whether the accused FortiSOC3 achieves the claimed "complete" overlap of the cutout with the contact pad. The degree of any remaining, potentially incidental, overlap and whether it is functionally and legally significant will be a key point of contention.

V. Key Claim Terms for Construction

Term (’245 Patent, Claim 1): "an area within two ball pad pitches of the corner of the die"

Context and Importance

This phrase defines the precise location and size of the claimed "keep-out" zone. A finding of infringement requires showing that the accused device has signal traces over ball pads outside this zone but not inside it. The construction of this term is therefore dispositive for infringement.

Intrinsic Evidence for Interpretation

  • Evidence for a Broader Interpretation: The specification describes the high stress zone as extending "approximately two ball pitches away from the die corner," which could suggest a more flexible or functionally defined boundary rather than a rigid geometric one (’245 Patent, col. 3:25-26).
  • Evidence for a Narrower Interpretation: The claim language itself omits the word "approximately," which may suggest a stricter, more precise measurement is required. A party could argue that the depiction in Figure 4, which illustrates the zone, defines its specific shape and limits its scope (’245 Patent, Fig. 4).

Term (’340 Patent, Claim 1): "substantially no overlap"

Context and Importance

This term is a negative limitation that is fundamental to the patent's method for reducing parasitic capacitance. Practitioners may focus on this term because its interpretation—whether it means zero overlap or permits some functionally de minimis amount—will determine whether the accused device infringes.

Intrinsic Evidence for Interpretation

  • Evidence for a Broader Interpretation (favoring patentee): A party could argue the term is functional, meaning any overlap so minor that it does not materially increase parasitic capacitance would still constitute "substantially no overlap." The specification's focus on achieving a functional result—the reduction of signal distortion—supports this view (’340 Patent, col. 2:57-60).
  • Evidence for a Narrower Interpretation (favoring defendant): The claim also requires that the cutout's insulating area "completely overlaps" the contact pad. A party could argue this requires a complete absence of geometric overlap, pointing to illustrations like Figure 5 which depict a clean void with no overlap whatsoever (’340 Patent, Fig. 5).

VI. Other Allegations

Willful Infringement

The complaint alleges willful infringement for all three asserted patents. The basis for this allegation is pre-suit knowledge stemming from "actual notice" that a Bell Semiconductor representative allegedly provided to Fortinet on or about June 30, 2023, regarding the patents and the specific infringing products (Compl. ¶¶ 40, 50, 63).

VII. Analyst’s Conclusion: Key Questions for the Case

  • A core issue will be one of definitional scope and factual proof: For the ’245 patent, can Plaintiff prove that the FortiASIC-CP9’s physical layout falls within the specific geometric constraints of claim 1, particularly the "keep-out" zone defined by "an area within two ball pad pitches of the corner of the die"? This will turn on both claim construction and evidence from the accused device itself.
  • A second key issue will be one of degree and interpretation: For the ’340 patent, how will the court construe "substantially no overlap"? Does this term demand absolute geometric separation, or does it allow for functionally insignificant overlap, and does the accused FortiSOC3 meet the construed standard?
  • A third central question will be one of process verification: For the ’269 patent, which claims a method of manufacturing, can Plaintiff produce evidence, likely through discovery of Fortinet's or its suppliers' confidential processes, that the accused FortiSOC3 chips were in fact made using the claimed steps?