Samsung Electronics Co Ltd v. Raytheon Co

Robert Hails

Matthew A. Smith

Zhuanjia Gu

Heath Briggs

Stanley A. Schlitter

Thomas J. Filarski

John L. Abramic

Daniel S. Stringfield

Brian Fahrenbach

Prosecution History analysis

Examiner Search analysis

Invalidity Framework analysis

Samsung targets a semiconductor fabrication patent on trench isolation: Adan & Manning cited for obviousness against all 14 claims over HDP-CVD gap-fill tech.

Samsung Semiconductor Inc

Sony Corp

Raytheon Co

Samsung Electronics Co Ltd

Samsung Electronics America Inc

Last Docket Entry Date

Total Docket Entries

IPR2016-00962 | Samsung Electronics Co Ltd v. Raytheon Co | Ex Parte

Patent Trial and Appeal Board

Judge	Cases	Inst. Rate	FWD Inv. Rate
Jeffrey W Abraham	400+	59%	85%
Jennifer M Chagnon	500+	74%	71%
Jo-Anne M Kokoski	600+	55%	74%

Name	Ratings
Samsung Electronics Co Ltd	L5 A
Samsung Electronics America Inc	L5 A
Samsung Semiconductor Inc	L5 A
Sony Corp	L5 D

Name	Ratings
Greenberg Traurig LLP	L5 A
Heath Briggs	L2 B
Baker & Hostetler LLP	L5 E
Robert Hails	L5 A
Turner Boyd LLP	L3 D
Matthew A. Smith	L4 A
Zhuanjia Gu	-- -- --

Name	Ratings
Steptoe & Johnson LLP	L5 E
Thomas J. Filarski	L2 D
John L. Abramic	L1 D
Stanley A. Schlitter	-- -- --
Daniel S. Stringfield	-- -- --
Brian Fahrenbach	-- -- --