US 10,090,395 B2
Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctionsGeneral
US 10,090,395 B2
Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Monica D Harrison
Art Unit:
2896 Semiconductors/Memory
Agent:
Inventors:
Daniel E. Grupp; Daniel J. Connelly
Assignee:
Priority:
08/12/02
Filed:
01/23/18
Granted:
10/02/18
Expiration:
08/12/22
Abstract
An electrical device in which an interface layer is disposed in between and in contact with a conductor and a semiconductor.
Cooperative Patent Classification (CPC)
H10H10D62/8325H10DH01L21/28537H01L