US 10,510,842 B2
SEMICONDUCTOR DEVICES WITH GRADED DOPANT REGIONSGeneral
US 10,510,842 B2
SEMICONDUCTOR DEVICES WITH GRADED DOPANT REGIONS
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Ajay Arora
Art Unit:
2892 Semiconductors/Memory
Agent:
PATENT CAPITAL FUNDING 2018 - SERIES 1-A, LLC
Inventors:
G.R. MOHAN RAO
Assignee:
PATENT CAPITAL FUNDING 2018 - SERIES 1-A, LLC
Priority:
09/03/04
Filed:
05/09/17
Granted:
12/17/19
Expiration:
09/03/24
Abstract
Most semiconductor devices manufactured today, have uniform dopant concentration, either in the lateral or vertical device active (and isolation) regions. By grading the dopant concentration, the performance in various semiconductor devices can be significantly improved. Performance improvements can be obtained in application specific areas like increase in frequency of operation for digital logic, various power MOFSFET and IGBT ICs, improvement in refresh time for DRAMs, decrease in programming time for nonvolatile memory, better visual quality including pixel resolution and color sensitivity for imaging ICs, better sensitivity for varactors in tunable filters, higher drive capabilities for JFETs, and a host of other applications.
Cooperative Patent Classification (CPC)
H10H10D12/441H10F39/18H10D