US 11,233,066 B2
Three-dimensional memory device and method for forming the same
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US 11,233,066 B2
Three-dimensional memory device and method for forming the same
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Bo B Jang
Art Unit:
2894 Semiconductors/Memory
Agent:
Bayes PLLC
Inventors:
Linchun Wu; Wenxi Zhou
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD.
Priority:
04/27/20
Filed:
05/28/20
Granted:
01/25/22
Expiration:
06/13/40
Cooperative Patent Classification (CPC)
H01H01L21/02532H01L

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