US 12,094,767 B2
Barrier layers for word line contacts in a three-dimensional NAND memory and fabrication methods thereofGeneral
US 12,094,767 B2
Barrier layers for word line contacts in a three-dimensional NAND memory and fabrication methods thereof
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Shahed Ahmed
Art Unit:
2893 Semiconductors/Memory
Agent:
Inventors:
--
Priority:
--
Filed:
01/20/22
Granted:
09/17/24
Expiration:
12/11/42
Cooperative Patent Classification (CPC)
H01H01L21/76832H01L