US 12,232,313 B2 | Staircase structure in three-dimensional memory device and method for forming the same

US 12,232,313 B2

Staircase structure in three-dimensional memory device and method for forming the same

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US 12,232,313 B2

Staircase structure in three-dimensional memory device and method for forming the same

Tech Center:

2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing

Examiner:

Shahed Ahmed

Art Unit:

2813 Semiconductors/Memory

Agent:

Inventors:

Assignee:

Priority:

Filed:

05/08/23

Granted:

02/18/25

Expiration:

03/23/40