US 12,266,403 B2
Three-dimensional NAND memory and fabrication method thereof
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US 12,266,403 B2
Three-dimensional NAND memory and fabrication method thereof
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Anthony Ho
Art Unit:
2817 Semiconductors/Memory
Agent:
HANLEY, FLIGHT & ZIMMERMAN, LLC
Inventors:
--
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD.
Priority:
--
Filed:
03/31/22
Granted:
04/01/25
Expiration:
04/23/43
Cooperative Patent Classification (CPC)
H01H01L23/5283H01LG11C16/0483G11CY02D10/00Y02D

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