US 6,103,611 A
Methods and arrangements for improved spacer formation within a semiconductor deviceGeneral
US 6,103,611 A
Methods and arrangements for improved spacer formation within a semiconductor device
Tech Center:
1700 Chemical and Materials Engineering
Examiner:
Benjamin L. Utech
Art Unit:
1765 Organic Chemistry, Polymers, Compositions
Agent:
LONE STAR SILICON INNOVATIONS LLC
Inventors:
WILLIAM G. EN; MINH VAN NGO; CHIH-YUH YANG; DAVID K. FOOTE; SCOTT A. BELL; OLOV B. KARLSSON; CHRISTOPHER F. LYONS
Assignee:
Priority:
12/18/97
Filed:
12/18/97
Granted:
08/15/00
Expiration:
12/18/17
Abstract
Methods and arrangements are provided to increase the process control during the formation of spacers within a semiconductor device. The methods and arrangements include the use of non-functional or dummy lines, regions and/or patterns to create a topology that causes the subsequently formed spacers to be more predictable and uniform in shape and size.