US 6,404,480 B2
Contact structureGeneral
US 6,404,480 B2
Contact structure
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
William L. Sikes
Art Unit:
2871 Optics
Agent:
Inventors:
Yoshiharu Hirakata; Shunpei Yamazaki
Assignee:
Priority:
03/27/97
Filed:
12/12/00
Granted:
06/11/02
Expiration:
03/24/18
Abstract
There is disclosed a contact structure for electrically connecting conducting lines formed on a first substrate of an electrooptical device such as a liquid crystal display with conducting lines formed on a second substrate via conducting spacers while assuring a uniform cell gap among different cells if the interlayer dielectric film thickness is nonuniform across the cell or among different cells. A first conducting film and a dielectric film are deposited on the first substrate. Openings are formed in the dielectric film. A second conducting film covers the dielectric film left and the openings. The conducting spacers electrically connect the second conducting film over the first substrate with a third conducting film on the second substrate. The cell gap depends only on the size of the spacers, which maintain the cell gap.
Cooperative Patent Classification (CPC)
G02G02F1/13392G02F