US 6,424,041 B1
Semiconductor deviceGeneral
US 6,424,041 B1
Semiconductor device
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Stephen D. Meier
Art Unit:
2822 Semiconductors/Memory
Agent:
Inventors:
Toshiyuki Oashi; Takashi Uehara
Assignee:
Priority:
08/18/00
Filed:
05/04/01
Granted:
07/23/02
Expiration:
05/04/21
Abstract
A semiconductor device having copper wiring and capable of reliably preventing copper atoms from diffusing into a memory storage region even in a slight amount is obtained. This semiconductor device includes on a semiconductor substrate a memory cell portion and a wiring portion including copper wires, and includes in a region surrounding the memory cell portion a copper-diffusion preventing film for blocking diffusion of copper atoms from the wiring portion.
Cooperative Patent Classification (CPC)
H01H01L2924/0002H01LH10D1/712H10D