US 6,538,324 B1
Multi-layered wiring layer and method of fabricating the sameGeneral
US 6,538,324 B1
Multi-layered wiring layer and method of fabricating the same
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Tom Thomas
Art Unit:
2811 Semiconductors/Memory
Inventors:
Masayoshi Tagami; Yoshihiro Hayashi
Assignee:
Priority:
06/24/99
Filed:
06/19/00
Granted:
03/25/03
Expiration:
06/19/20
Abstract
There is provided a barrier film preventing diffusion of copper from a copper wiring layer formed on a semiconductor substrate. The barrier film has a multi-layered structure of first and second films wherein the first film is composed of crystalline metal containing nitrogen therein, and the second film is composed of amorphous metal nitride. The barrier film is constituted of common metal atomic species. The barrier film prevents copper diffusion from a copper wiring layer into a semiconductor device, and has sufficient adhesion characteristic to both a copper film and an interlayer insulating film.