US 6,576,063 B2
Apparatus and method for use in manufacturing a semiconductor deviceGeneral
US 6,576,063 B2
Apparatus and method for use in manufacturing a semiconductor device
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Alexander Ghyka
Art Unit:
2812 Semiconductors/Memory
Inventors:
Kazuyuki Toyoda; Osamu Kasahara; Tsutomu Tanaka; Mamoru Sueyoshi; Nobuhito Shima; Masanori Sakai
Assignee:
Priority:
03/30/00
Filed:
01/24/01
Granted:
06/10/03
Expiration:
01/24/21
Abstract
An apparatus for use in manufacturing a semiconductor device allows one or more substrates treated substantially free of the metal particles released from the chamber wall and the high energy particles emitted from the plasma and also allows them to uniformly heated to a relatively high temperature. The apparatus comprises a reaction chamber wherein one or more substrates to be treated are disposed, a plasma source arranged outside of and in proximity to the reaction chamber, an active species supply port for providing active species generated by the plasma source to the reaction chamber and arranged at a side of the reaction chamber and an exhaust port provided at the opposite side to the active species supply port. The active species flows parallel to the surfaces of the substrates.
Cooperative Patent Classification (CPC)
C23C23C16/45563C23CH01L21/67069H01J37/32357H01L