US 6,747,320 B2
Semiconductor device with DRAM insideGeneral
US 6,747,320 B2
Semiconductor device with DRAM inside
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
H. Jey Tsai
Art Unit:
2812 Semiconductors/Memory
Agent:
Inventors:
Takashi Nakabayashi
Assignee:
Priority:
08/07/02
Filed:
07/18/03
Granted:
06/08/04
Expiration:
07/18/23
Abstract
A semiconductor device is provided in which the difference in characteristics between a pair of sense amplifier transistors of a DRAM is suppressed, whereby the sensitivity of a sense amplifier is enhanced. A pair of gate electrodes of a N-type sense amplifier transistor and a pair of gate electrodes of a P-type sense amplifier transistor constituting a CMOS sense amplifier of the DRAM respectively are placed in parallel to each other in one active region in the same direction as that of bit lines. A pair of adjacent N-type sense amplifier transistors and a pair of adjacent P-type sense amplifier transistors are isolated by STI.
Cooperative Patent Classification (CPC)
H10H10D89/10H10D