US 6,852,616 B2
Semiconductor device and method for producing the sameGeneral
US 6,852,616 B2
Semiconductor device and method for producing the same
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Tom Thomas
Art Unit:
2815 Semiconductors/Memory
Agent:
Inventors:
Ryuichi Sahara; Takahiro Kumakawa; Kazuyuki Kainoh; Nozomi Shimoishizaka; Kazumi Watase
Assignee:
Priority:
11/29/00
Filed:
06/10/02
Granted:
02/08/05
Expiration:
01/29/22
Abstract
A first element electrode and a second element electrode connected electrically to a semiconductor element on a substrate are formed, and then an insulating film is formed on the substrate including the element electrodes. Thereafter, a first opening for exposing the first element electrode and a second opening for exposing the second element electrode are formed on the insulating film. Then, a first external electrode connected to the first element electrode via the first opening is formed immediately above the first element electrode. Furthermore, a second external electrode and a connecting wire having one end connected to the second element electrode via the second opening and the other end connected to the second external electrode are formed on the insulating film.
Cooperative Patent Classification (CPC)
H01H01L2924/01004H01L