US 7,375,027 B2
Method of providing contact via to a surfaceGeneral
US 7,375,027 B2
Method of providing contact via to a surface
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Kevin M. Picardat
Art Unit:
2822 Semiconductors/Memory
Inventors:
Kuei-Chang Tsai; Chunyuan Chao; Chia-Shun Hsiao
Assignee:
Priority:
10/12/04
Filed:
10/12/04
Granted:
05/20/08
Expiration:
07/06/25
Abstract
A contact via to a surface of a semiconductor material is provided, the contact via having a sidewall which is produced by anisotropically etching a dielectric layer which is placed on via openings. A protective layer is provided on the surface of the semiconductor material. To protect the substrate, an initial etch through an interlayer dielectric is performed to create an initial via which extends toward, but not into the substrate. At least a portion of the protective layer is retained on the substrate. In another step, the final contact via is created. During this step the protective layer is penetrated to open a via to the surface of the semiconductor material.
Cooperative Patent Classification (CPC)
H01H01L21/76802H01L