US 7,622,007 B2 | Substrate processing apparatus and semiconductor device producing method

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US 7,622,007 B2

Substrate processing apparatus and semiconductor device producing method

Tech Center:

1700 Chemical and Materials Engineering

Examiner:

Ram N. Kackar

Art Unit:

1792 Food, Analytical Chemistry, Sterilization, Biochemistry, Electrochemistry

Agent:

Birch, Stewart, Kolasch & Birch, L.L.P.

Inventors:

Naoharu Nakaiso

Assignee:

KOKUSAI ELECTRIC CORPORATION

Priority:

08/07/03

Filed:

08/05/04

Granted:

11/24/09

Expiration:

08/05/24

Abstract

Disclosed is a substrate processing apparatus which comprises reaction tubes (3,4) for processing multiple substrates (27), a heater (5) for heating the substrates, and gas introducing nozzles (6,7,8,9,10) for supplying a gas into the reaction tubes. Each of the gas introducing nozzles (6,7,8,9) is structured so that at least the channel cross section of a portion facing the heater (5) is larger than those of the other portions.

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