US 7,745,847 B2
METAL OXIDE SEMICONDUCTOR TRANSISTORGeneral
US 7,745,847 B2
METAL OXIDE SEMICONDUCTOR TRANSISTOR
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Phuc T Dang
Art Unit:
2892 Semiconductors/Memory
Agent:
Inventors:
Chu-Yin Tseng; Shih-Chieh Hsu; Chih-Chiang Wu; Shyh-Fann Ting; Po-Lun Cheng; Hsuan-Hsu Chen
Assignee:
Priority:
08/09/07
Filed:
08/09/07
Granted:
06/29/10
Expiration:
06/10/28
Abstract
The present invention provides a method for fabricating a metal oxide semiconductor transistor. First, a semiconductor substrate is provided and at least a gate is formed on the semiconductor substrate. A protective layer is then formed on the semiconductor substrate and the gate. Subsequently, at least a recess is formed in the semiconductor substrate adjacent to the gate, and then an epitaxial layer is formed in the recess. A lightly doped region is formed in the semiconductor substrate adjacent to the gate. Finally, a spacer is formed on the sidewall of the gate.
Cooperative Patent Classification (CPC)
H01H01L21/823807H01L