US 7,893,501 B2
Semiconductor device including MISFET having internal stress filmGeneral
US 7,893,501 B2
Semiconductor device including MISFET having internal stress film
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Howard Weiss
Art Unit:
2814 Semiconductors/Memory
Inventors:
Masafumi Tsutsui; Hiroyuki Umimoto; Kaori Akamatsu
Assignee:
Priority:
06/16/03
Filed:
07/09/08
Granted:
02/22/11
Expiration:
06/03/24
Abstract
A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.
Cooperative Patent Classification (CPC)
H10H10D84/0167H10D