US 7,923,311 B2
Electro-optical device and thin film transistor and method for forming the sameGeneral
US 7,923,311 B2
Electro-optical device and thin film transistor and method for forming the same
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Michael S Lebentritt
Art Unit:
2829 Semiconductors/Memory
Inventors:
Hongyong Zhang; Naoto Kusumoto
Priority:
06/19/91
Filed:
09/17/07
Granted:
04/12/11
Expiration:
05/11/15
Abstract
A semiconductor device having a pair of impurity doped second semiconductor layers, formed on a first semiconductor layer having a channel formation region therein, an outer edge of the first semiconductor film being at least partly coextensive with an outer edge of the impurity doped second semiconductor layers. The semiconductor device further includes source and drain electrodes formed on the pair of impurity doped second semiconductor layers, wherein the pair of impurity doped second semiconductor layers extend beyond inner sides edges of the source and drain electrodes so that a stepped portion is formed from an upper surface of the source and drain electrodes to a surface of the first semiconductor film.
Cooperative Patent Classification (CPC)
H10H10D30/0316H10DH01L21/02532H01LG02F1/13454G02F