US 7,923,764 B2
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAMEGeneral
US 7,923,764 B2
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Chuong A. Luu
Art Unit:
2892 Semiconductors/Memory
Inventors:
Junji HIRASE; Akio Sebe; Naoki Kotani; Gen Okazaki; Kazuhiko Aida; Shinji Takeoka
Priority:
07/20/09
Filed:
07/20/09
Granted:
04/12/11
Expiration:
07/24/26
Abstract
A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode.
Cooperative Patent Classification (CPC)
H10H10D30/0227H10D