US 8,329,572 B2
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAMEGeneral
US 8,329,572 B2
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Long Tran
Art Unit:
2829 Semiconductors/Memory
Inventors:
Shunsuke ISONO
Assignee:
Priority:
03/18/11
Filed:
03/18/11
Granted:
12/11/12
Expiration:
12/13/24
Abstract
In a method for fabricating a semiconductor device, first, a first metal interconnect is formed in an interconnect formation region, and a second metal interconnect is formed in a seal ring region. Subsequently, by chemical mechanical polishing or etching, the upper portions of the first metal interconnect and the second metal interconnect are recessed to form recesses. A second insulating film filling the recesses is then formed above a substrate, and the upper portion of the second insulating film is planarized. Next, a hole and a trench are formed to extend halfway through the second insulating film, and ashing and polymer removal are performed. Subsequently to this, the hole and the trench are allowed to reach the first metal interconnect and the second metal interconnect.
Cooperative Patent Classification (CPC)
H01H01L2924/0002H01L