US 8,492,840 B2
Semiconductor device having an oxide semiconductor layerGeneral
US 8,492,840 B2
Semiconductor device having an oxide semiconductor layer
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Howard Weiss
Art Unit:
2814 Semiconductors/Memory
Inventors:
Shunpei YAMAZAKI; Hiromichi GODO; Hideomi SUZAWA; Shinya SASAGAWA; Motomu KURATA; Mayumi MIKAMI
Priority:
01/22/10
Filed:
01/18/11
Granted:
07/23/13
Expiration:
06/20/31
Abstract
An object is to provide a semiconductor device including an oxide semiconductor, which maintains favorable characteristics and achieves miniaturization. The semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, in which the source electrode and the drain electrode each include a first conductive layer, and a second conductive layer having a region which extends in a channel length direction from an end portion of the first conductive layer.
Cooperative Patent Classification (CPC)
H10H10D30/6755H10D