US 8,673,076 B2
Substrate processing apparatus and semiconductor device producing method
Log In
Please sign up or log in to access the advanced features of
Ex Parte Enterprise.
or Log in

General

US 8,673,076 B2
Substrate processing apparatus and semiconductor device producing method
Tech Center:
1700 Chemical and Materials Engineering
Examiner:
Jeffrie R Lund
Art Unit:
1716 Coating, Etching, Cleaning, Single Crystal Growth
Agent:
Birch, Stewart, Kolasch & Birch, LLP
Inventors:
Naoharu NAKAISO
Assignee:
KOKUSAI ELECTRIC CORPORATION
Priority:
08/07/03
Filed:
10/13/09
Granted:
03/18/14
Expiration:
04/16/27
Abstract
Disclosed is a substrate processing apparatus which comprises reaction tubes (3,4) for processing multiple substrates (27), a heater (5) for heating the substrates, and gas introducing nozzles (6,7,8,9,10) for supplying a gas into the reaction tubes. Each of the gas introducing nozzles (6,7,8,9) is structured so that at least the channel cross section of a portion facing the heater (5) is larger than those of the other portions.
Cooperative Patent Classification (CPC)
C23C23C16/45578C23CH01L21/67109H01L

Analytics

Cases

Patent Assignments

Citations