US 8,816,375 B2
Radiation-Emitting Semiconductor Body, Method for Producing a Radiation-Emitting Semiconductor Body and Radiation-Emitting Semiconductor ComponentGeneral
US 8,816,375 B2
Radiation-Emitting Semiconductor Body, Method for Producing a Radiation-Emitting Semiconductor Body and Radiation-Emitting Semiconductor Component
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Dung A. Le
Art Unit:
2818 Semiconductors/Memory
Agent:
Inventors:
Herbert Brunner; Patrick Ninz
Assignee:
OSRAM OLED GMBH
Priority:
06/08/11
Filed:
01/28/13
Granted:
08/26/14
Expiration:
06/23/31
Abstract
A radiation-emitting semiconductor body is provided which, besides an epitaxial semiconductor layer sequence having an active zone that is suitable for generating electromagnetic radiation, has a carrier layer that is intended to mechanically stabilize the epitaxial semiconductor layer sequence. The semiconductor body furthermore has contact structures for electrical contacting of the semiconductor body, which respectively have a volume region and a surface bonding region. The surface bonding region is formed from a material which is different from the material of the volume region.
Cooperative Patent Classification (CPC)
H01H01L2224/92227H01LH05K2201/10969H05KH10H20/0364H10H