US 9,093,473 B2
METHOD FOR FABRICATING METAL-OXIDE SEMICONDUCTOR TRANSISTORGeneral
US 9,093,473 B2
METHOD FOR FABRICATING METAL-OXIDE SEMICONDUCTOR TRANSISTOR
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Laura Menz
Art Unit:
2813 Semiconductors/Memory
Agent:
Winston Hsu, Scott Margo
Inventors:
Wen-Chen Wu; Po-Chao Tsao; Ming-Te Wei; Lung-En Kuo
Assignee:
Priority:
07/15/14
Filed:
07/15/14
Granted:
07/28/15
Expiration:
07/15/30
Abstract
A method for fabricating a metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a silicon layer on the semiconductor substrate; performing a first photo-etching process on the silicon layer for forming a gate pattern; forming an epitaxial layer in the semiconductor substrate adjacent to two sides of the gate pattern; and performing a second photo-etching process on the gate pattern to form a slot in the gate pattern while using the gate pattern to physically separate the gate pattern into two gates.
Cooperative Patent Classification (CPC)
H01H01L21/823807H01L