US 9,184,292 B2
SEMICONDUCTOR STRUCTURE WITH DIFFERENT FINS OF FINFETSGeneral
US 9,184,292 B2
SEMICONDUCTOR STRUCTURE WITH DIFFERENT FINS OF FINFETS
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Zandra Smith
Art Unit:
2816 Semiconductors/Memory
Agent:
J.C. Patents
Inventors:
Chin-Cheng Chien; Teng-Chun Tsai; Chin-Fu Lin; Chun-Yuan Wu; Chih-Chien Liu
Assignee:
Priority:
07/24/14
Filed:
07/24/14
Granted:
11/10/15
Expiration:
02/09/32
Abstract
A semiconductor structure for forming FinFETs is described. The semiconductor structure includes a semiconductor substrate, a plurality of odd fins of the FinFETs on the substrate, and a plurality of even fins of the FinFETs on the substrate between the odd fins of the FinFETs. The odd fins of the FinFETs are defined from the substrate. The even fins of the FinFETs are different from the odd fins of the FinFETs in at least one of the width and the material, and may be further different from the odd fins of the FinFETs in the height.
Cooperative Patent Classification (CPC)
H01H01L21/823431H01L