US 9,281,405 B2
Semiconductor device and method for manufacturing the sameGeneral
US 9,281,405 B2
Semiconductor device and method for manufacturing the same
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
David S Blum
Art Unit:
2813 Semiconductors/Memory
Inventors:
Hideomi SUZAWA; Shinya SASAGAWA
Assignee:
Priority:
12/23/11
Filed:
07/22/14
Granted:
03/08/16
Expiration:
12/17/32
Abstract
A bottom-gate transistor with a short channel length and a method for manufacturing the transistor are provided. A bottom-gate transistor with a short channel length in which portions of a source electrode and a drain electrode which are proximate to a channel formation region are thinner than other portions thereof was devised. In addition, the portions of the source electrode and the drain electrode which are proximate to the channel formation region are formed in a later step than the other portions thereof, whereby a bottom-gate transistor with a short channel length can be manufactured.
Cooperative Patent Classification (CPC)
H10H10D30/6757H10D