US 9,293,664 B2
Wafer-level light emitting diode package and method of fabricating the sameGeneral
US 9,293,664 B2
Wafer-level light emitting diode package and method of fabricating the same
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Cuong Q Nguyen
Art Unit:
2811 Semiconductors/Memory
Agent:
Inventors:
Won Cheol Seo; Dae Sung Cho
Assignee:
Priority:
09/24/10
Filed:
07/31/15
Granted:
03/22/16
Expiration:
07/29/31
Abstract
Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.
Cooperative Patent Classification (CPC)
H10H10H20/01335H10HH01L2924/0002H01L