US 9,318,316 B2
Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus for forming thin film containing at least two different elementsGeneral
US 9,318,316 B2
Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus for forming thin film containing at least two different elements
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Scott B Geyer
Art Unit:
2812 Semiconductors/Memory
Inventors:
Yushin TAKASAWA; Hajime Karasawa; Yoshiro Hirose
Assignee:
Priority:
11/26/08
Filed:
11/25/09
Granted:
04/19/16
Expiration:
11/25/29
Abstract
Provided are a method of manufacturing a semiconductor device and a substrate processing apparatus. The method includes forming a thin film having a predetermined thickness and a predetermined composition on the substrate, the thin film including a first element and a second element different from the first element, by repeating a cycle a plurality of times, the cycle including: (a) forming a first layer including the first element and having a thickness of several atomic layers or less on the substrate by supplying a gas containing the first element into a process vessel accommodating the substrate under a condition where a chemical vapor deposition (CVD) reaction is caused; and (b) forming a second layer including the first element and the second element by supplying a gas containing the second element into the process vessel to modify the first layer without saturating a modifying reaction of the first layer by the gas containing the second element.
Cooperative Patent Classification (CPC)
C23C23C16/45531C23CH01L21/02332H01L