US 9,525,084 B2
MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICESGeneral
US 9,525,084 B2
MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Eduardo A Rodela
Art Unit:
2893 Semiconductors/Memory
Agent:
Inventors:
Shih-Yuan WANG; Shih-Ping Wang
Assignee:
IP LITFIN US 2024 LLC
Priority:
11/18/15
Filed:
11/18/15
Granted:
12/20/16
Expiration:
11/18/34
Abstract
Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as holes, effectively increase the absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more. Their thickness dimensions allow them to be conveniently integrated on the same Si chip with CMOS, BiCMOS, and other electronics, with resulting packaging benefits and reduced capacitance and thus higher speeds.
Cooperative Patent Classification (CPC)
Y02Y02P70/50Y02E10/547Y02PH10F77/1433H10FH04B10/6971H04BG02B6/4204G02B