US 9,793,448 B2
Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the sameGeneral
US 9,793,448 B2
Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Christine Enad
Art Unit:
2823 Semiconductors/Memory
Inventors:
Jung Hwa JUNG; Bang Hyun Kim
Assignee:
Priority:
05/18/10
Filed:
08/12/16
Granted:
10/17/17
Expiration:
03/25/31
Abstract
A light-emitting diode (LED) includes a substrate, a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a wavelength converting layer configured to convert a wavelength of light emitted from the semiconductor stacked structure, the wavelength converting layer covering side surfaces of the substrate and the semiconductor stacked structure, and a distributed Bragg reflector (DBR) configured to reflect at least a portion of light wavelength-converted by the wavelength converting layer, in which at least a portion of the DBR is covered with a metal layer configured to reflect light transmitted through the DBR.
Cooperative Patent Classification (CPC)
H10H10H20/8514H10HH01L2224/48227H01L