US 9,905,691 B2
Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctionsGeneral
US 9,905,691 B2
Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Monica D Harrison
Art Unit:
2896 Semiconductors/Memory
Agent:
Inventors:
Daniel J. Connelly; Daniel E. Grupp
Assignee:
Priority:
08/12/02
Filed:
02/19/16
Granted:
02/27/18
Expiration:
10/10/23
Abstract
An electrical device in which an interface layer is disposed in between and in contact with a conductor and a semiconductor.
Cooperative Patent Classification (CPC)
H10H10D30/0277H10DH01L21/28537H01L