US 9,953,880 B1
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAMEGeneral
US 9,953,880 B1
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Tech Center:
2800 Semiconductors/Memory, Circuits/Measuring and Testing, Optics/Photocopying, Printing/Measuring and Testing
Examiner:
Shahed Ahmed
Art Unit:
2823 Semiconductors/Memory
Agent:
Inventors:
Chun-Hao Lin; Hsin-Yu Chen; Shou-Wei Hsieh
Assignee:
Priority:
07/27/17
Filed:
07/27/17
Granted:
04/24/18
Expiration:
07/27/37
Abstract
A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a shallow trench isolation (STI) around the fin-shaped structure; forming a gate layer on the fin-shaped structure and the STI; removing part of the gate layer, part of the fin-shaped structure, and part of the STI to form a trench; and forming a dielectric layer into the trench to form a single diffusion break (SDB) structure.